MRF7S19100NR1 MRF7S19100NBR1
17
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Jan. 2008
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), On Characteristics table, p. 2
?
Updated Typical Performance table to provide better definition of characterization attributes, p. 3
?
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4
?
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
?
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to better match the
device?s capabilities, p. 7
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 8
?
Updated Fig. 13, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test
Signal, to better represent production test signal, p. 8
?
Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p.11-13. Added pin numbers 1 through 4
on Sheet 1.
?
Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 14-16. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
?
Added Product Documentation and Revision History, p. 17
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相关代理商/技术参数
MRF7S19100NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19120NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19120NR1_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S19170HR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S19170HS 制造商:Freescale Semiconductor 功能描述: 制造商:FREESCALE-SEMI 功能描述:
MRF7S19170HSR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray